Advances in Solid-State Circuits Technologies

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It achieves a Schreier's FOM of For low-light-level imaging, the performance of a CMOS image sensor is usually limited by the temporal readout noise TRN generated from its analog readout circuit chain.

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Although a sub-electron TRN level can be achieved with a high-gain pixel-level amplifier, the pixel uniformity is highly impaired up to a few percent by its open-loop amplifier structure. The TRN can be suppressed without this penalty by employing either a high-gain column-level amplifier or a correlated multiple sampling CMS technique.

However, only 1-to-2 electron TRN level has been reported with the individual use of these approaches, and the low-frequency noise of the in-pixel source follower i. Therefore, by implementing a high-gain column-level amplifier and CMS technique together with an in-pixel buried-channel source follower, the TRN level can be reduced even further to the level of 0. This work presents a 2. Nara, Japan. BioCAS is a premier international forum for presenting the interdisciplinary research and development activities at the crossroads of medicine, life sciences, physical sciences and engineering that shape tomorrow's medical devices and healthcare systems.

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